Shenzhen Kaiyue Century Technology Co., Ltd.About UsGuangming Tong affluence Industrial Zone, Guangming District, ShenzhenShenzhen Kaiyue Century Technology Co., Ltd. was founded in 2011.
The company's core r & D team of nearly 5 people, all from the domestic well-known consumer electronics manufacturers, have rich industry experience, mature supporting supplier system.
We focus on the development and manufacturing of consumer electronic products, including mobile power and Bluetooth audio products have a number of patents, more than 10 years of industry precipitation has rich experience in development.Shenzhen Kaiyue Century Technology Co., Ltd.About UsGuangming Tong affluence Industrial Zone, Guangming District, ShenzhenShenzhen Kaiyue Century Technology Co., Ltd. was founded in 2011.
The company's core r & D team of nearly 5 people, all from the domestic well-known consumer electronics manufacturers, have rich industry experience, mature supporting supplier system.
We focus on the development and manufacturing of consumer electronic products, including mobile power and Bluetooth audio products have a number of patents, more than 10 years of industry precipitation has rich experience in development.Shenzhen Kaiyue Century Technology Co., Ltd.Shenzhen Kaiyue Century Technology Co., Ltd.Shenzhen Kaiyue Century Technology Co., Ltd.Shen
Shenzhen Kaiyue Century Technology Co., Ltd. was founded in 2011.
The company's core r & D team of nearly 5 people, all from the domestic well-known consumer electronics manufacturers, have rich industry experience, mature supporting supplier system.
We focus on the development and manufacturing of consumer electronic products, including mobile power and Bluetooth audio products have a number of patents, more than 10 years of industry precipitation has rich experience in development.
GaN, or gallium nitride, is a compound with semiconductor properties. With GaN, electronic components such as diodes, transistors and amplifiers can be made. Although GaN behaves very similar to silicon, it has a number of advantages over silicon-based devices, mainly because it has a larger "band gap" compared to silicon.
The characteristics of GaN include higher temperature, high power processing capacity and electron mobility 1,000 times higher than that of silicon.
As a result, GaN is proving to be more advantageous and promising than silicon when it comes to high power situations.
